Defects in Semiconductors (Volume 91) (Semiconductors and Semimetals, Volume 91)

Author(s)

This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths.Expert contributorsReviews of the most important recent literatureClear illustrationsA broad view, including examination of defects in different semiconductors

Keywords
, , , , , , , ,
Name in long format: Defects in Semiconductors (Volume 91) (Semiconductors and Semimetals, Volume 91)
ISBN-10: 0128019352
ISBN-13: 9780128019351
Book pages: 458
Book language: en
Edition: 1
Binding: Hardcover
Publisher: Academic Press
Dimensions: Height: 9 Inches, Length: 6 Inches, Weight: 1.8077905484 Pounds, Width: 1.19 Inches

Related Books