Progress In Quantum Electronics, No 3, 1984: Properties Of Doped Silicon And Germanium Infrared Detectors (3rd Of 4 Pts)
Author(s)
T. S. Moss
T. S. Moss
Name in long format: | Progress In Quantum Electronics, No 3, 1984: Properties Of Doped Silicon And Germanium Infrared Detectors (3rd Of 4 Pts) |
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ISBN-10: | 0080331912 |
ISBN-13: | 9780080331911 |
Binding: | Paperback |
Publisher: | Pergamon Pr |